PlumX Metrics
Embed PlumX Metrics

Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer

Applied Physics Letters, ISSN: 0003-6951, Vol: 99, Issue: 17
2011
  • 7
    Citations
  • 0
    Usage
  • 9
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

Article Description

A high-aspect-ratio 3D multi-gate n-channel fin-shaped field effect transistor (FinFET) has been integrated with a stressor of a highly tensile nitride film as the initial inter layer dielectric capping layer upon a (110)-orientated silicon-on-insulator wafer. Drastically enhanced electrical performances, such as 190 enhancement of peak channel mobility, 91 of peak transconductance, and 34 of saturation current, etc., are achieved for an NMOS FinFET with a gate length of 90 nm. The I-I universal curve also demonstrates an extraordinary drive current gain of 26. Moreover, the hot carrier injection lifetime can be increased from 7.78 10 to 5.26 10year (yr) due to the incorporation of this high-tensile contact etching stop layer and relaxation of the Si crystalline channel layer. © 2011 American Institute of Physics.

Bibliographic Details

Wen Shiang Liao; Yongming Hu; Cong Ye; Wenfeng Wang; Di Zhou; Hao Wang; Haoshuang Gu; Mu Chun Wang; Szu Hung Chen; Kun Ming Chen; Yue Gie Liaw

AIP Publishing

Physics and Astronomy

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know