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Fabrication of sub-10 nm gap arrays over large areas for plasmonic sensors

Applied Physics Letters, ISSN: 0003-6951, Vol: 99, Issue: 26
2011
  • 79
    Citations
  • 0
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  • 62
    Captures
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Metrics Details

  • Citations
    79
    • Citation Indexes
      79
  • Captures
    62

Article Description

We report a high-throughput method for the fabrication of metallic nanogap arrays with high-accuracy over large areas. This method, based on shadow evaporation and interference lithography, achieves sub-10 nm gap sizes with a high accuracy of ±1.5 nm. Controlled fabrication is demonstrated over mm areas and for periods of 250 nm. Experiments complemented with numerical simulations indicate that the formation of nanogaps is a robust, self-limiting process that can be applied to wafer-scale substrates. Surface-enhanced Raman scattering (SERS) experiments illustrate the potential for plasmonic sensing with an exceptionally low standard-deviation of the SERS signal below 3 and average enhancement factors exceeding 1 × 10 . © 2011 American Institute of Physics.

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