Role of oxygen vacancy defect states in the n-type conduction of β-GaO
Journal of Applied Physics, ISSN: 0021-8979, Vol: 86, Issue: 7, Page: 3792-3796
1999
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Article Description
Based on semiempirical quantum-chemical calculations, the electronic band structure of β-GaO is presented and the formation and properties of oxygen vacancies are analyzed. The equilibrium geometries and formation energies of neutral and doubly ionized vacancies were calculated. Using the calculated donor level positions of the vacancies, the high temperature n-type conduction is explained. The vacancy concentration is obtained by fitting to the experimental resistivity and electron mobility. © 1999 American Institute of Physics.
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