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Role of oxygen vacancy defect states in the n-type conduction of β-GaO

Journal of Applied Physics, ISSN: 0021-8979, Vol: 86, Issue: 7, Page: 3792-3796
1999
  • 228
    Citations
  • 0
    Usage
  • 122
    Captures
  • 0
    Mentions
  • 0
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    228
    • Citation Indexes
      228
  • Captures
    122

Article Description

Based on semiempirical quantum-chemical calculations, the electronic band structure of β-GaO is presented and the formation and properties of oxygen vacancies are analyzed. The equilibrium geometries and formation energies of neutral and doubly ionized vacancies were calculated. Using the calculated donor level positions of the vacancies, the high temperature n-type conduction is explained. The vacancy concentration is obtained by fitting to the experimental resistivity and electron mobility. © 1999 American Institute of Physics.

Bibliographic Details

Hajnal, Zoltán; Miró, József; Kiss, Gábor; Réti, Ferenc; Deák, Péter; Herndon, Roy C.; Kuperberg, J. Michael

AIP Publishing

Physics and Astronomy

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