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A model for emission yield from planar photocathodes based on photon-enhanced thermionic emission or negative-electron-affinity photoemission

Journal of Applied Physics, ISSN: 0021-8979, Vol: 112, Issue: 9
2012
  • 55
    Citations
  • 0
    Usage
  • 64
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    55
    • Citation Indexes
      55
  • Captures
    64

Article Description

A general model is presented for electron emission yield from planar photocathodes that accounts for arbitrary cathode thickness and finite recombination velocities at both front and back surfaces. This treatment is applicable to negative electron affinity emitters as well as positive electron affinity cathodes, which have been predicted to be useful for energy conversion. The emission model is based on a simple one-dimensional steady-state diffusion treatment. The resulting relation for electron yield is used to model emission from thin-film cathodes with material parameters similar to GaAs. Cathode thickness and recombination at the emissive surface are found to strongly affect emission yield from cathodes, yet the magnitude of the effect greatly depends upon the emission mechanism. A predictable optimal film thickness is found from a balance between optical absorption, surface recombination, and emission rate. © 2012 American Institute of Physics.

Bibliographic Details

Kunal Sahasrabuddhe; Jared W. Schwede; Zhi Xun Shen; Nicholas A. Melosh; Igor Bargatin; Roger T. Howe; Joel Jean

AIP Publishing

Physics and Astronomy

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