Homogeneous pinhole free 1 nm AlO tunnel barriers on graphene
Applied Physics Letters, ISSN: 0003-6951, Vol: 101, Issue: 20
2012
- 28Citations
- 61Captures
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Article Description
We report on the topographical and electrical characterisations of 1 nm thick AlO dielectric films on graphene. The Al O is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O atmosphere. The Al O layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al O by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. © 2012 American Institute of Physics.
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