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Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide SbO films

Journal of Applied Physics, ISSN: 0021-8979, Vol: 112, Issue: 11
2012
  • 7
    Citations
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  • 12
    Captures
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Metrics Details

  • Citations
    7
    • Citation Indexes
      7
  • Captures
    12

Article Description

The concurrent presence of unipolar resistive switching (URS) and bipolar resistive switching (BRS) characteristics of the Sb/SbO /Pt structure were examined. It was discovered that the BRS phenomenon was driven by the abnormal reset process during URS cycles which was induced by the rupture and recovery of the conducting filament (CF) in the localized region near the anode. The electrical conduction behavior in the high resistance state of URS and BRS was explained by the Schottky emission and space-charge-limited current mechanism, meaning that the URS and BRS phenomena are induced by the extent of reoxidaton and reduction regarding the local CF-ruptured region. © 2012 American Institute of Physics.

Bibliographic Details

Youngbae Ahn; Jong Ho Lee; Gun Hwan Kim; Ji Woon Park; Young Seok Kim; Cheol Seong Hwang; Hyeong Joon Kim; Jaeyeong Heo; Seung Wook Ryu

AIP Publishing

Physics and Astronomy

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