Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO/metal gate stacks
Applied Physics Letters, ISSN: 0003-6951, Vol: 102, Issue: 1
2013
- 8Citations
- 7Captures
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Article Description
This letter investigates extra traps measured by charge pumping technique in the high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO/metal gate stacks. N-V characteristic curves with different duty ratios show that the hole discharge time (t) dominates the value of extra traps. By fitting ln (N (t = 1 μ s) - N (t)) - Δt at different temperatures and computing the equation t = τ exp (αd + αd), the results show that these extra traps measured by the charge pumping technique at high voltage zone can be attributed to high-k bulk shallow traps. © 2013 American Institute of Physics.
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