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Conduction band offset at GeO/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

Applied Physics Letters, ISSN: 0003-6951, Vol: 102, Issue: 10
2013
  • 32
    Citations
  • 0
    Usage
  • 36
    Captures
  • 0
    Mentions
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Metrics Details

  • Citations
    32
    • Citation Indexes
      32
  • Captures
    36

Article Description

We report a consistent conduction band offset (CBO) at a GeO/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 ± 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 ± 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO as a potential passivation layer for future Ge-based scaled CMOS devices. © 2013 American Institute of Physics.

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