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Surface passivation of n-type c-Si wafers by a-Si/SiO/SiN stack with <1 cm/s effective surface recombination velocity

Applied Physics Letters, ISSN: 0003-6951, Vol: 103, Issue: 18
2013
  • 23
    Citations
  • 0
    Usage
  • 45
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    23
    • Citation Indexes
      23
  • Captures
    45

Article Description

The passivation quality of an a-Si/SiO/SiN (aSON) stack deposited by conventional PECVD at <250°C with and without additional corona charging of SiN is presented. <2 fA/cm surface dark saturation current density and <1 cm/s effective surface recombination velocity were demonstrated on both planar and textured n-type Czochralski (CZ) substrates. It was shown that very good passivation can be achieved using <5 nm a-Si layers to provide low parasitic absorption. We also report effective minority carrier lifetimes >60 ms on 5000 ω-cm and 20.9 ms on 1.7 ω-cm mirror polished float zone (FZ) material passivated with aSON stacks. © 2013 AIP Publishing LLC.

Bibliographic Details

Stanislau Y. Herasimenka; Clarence J. Tracy; Vivek Sharma; Natasa Vulic; William J. Dauksher; Stuart G. Bowden

AIP Publishing

Physics and Astronomy

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