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Effect of sidewall surface recombination on the quantum efficiency in a YO passivated gated type-II InAs/GaSb long-infrared photodetector array

Applied Physics Letters, ISSN: 0003-6951, Vol: 103, Issue: 22
2013
  • 13
    Citations
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  • 18
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Metrics Details

  • Citations
    13
    • Citation Indexes
      13
  • Captures
    18

Article Description

YO was applied to passivate a long-wavelength infrared type-II superlattice gated photodetector array with 50% cut-off wavelength at 11 μm, resulting in a saturated gate bias that was 3 times lower than in a SiO passivated array. Besides effectively suppressing surface leakage, gating technique exhibited its ability to enhance the quantum efficiency of 100 × 100 μm size mesa from 51% to 57% by suppressing sidewall surface recombination. At 77 K, the gated photodetector showed dark current density and resistance-area product at -300 mV of 2.5 × 10 A/cm and 1.3 × 10 Ω cm, respectively, and a specific detectivity of 1.4 × 10 Jones. © 2013 AIP Publishing LLC.

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