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Achieving high brightness of silicon nanocrystal light-emitting device with a field-effect approach

Applied Physics Letters, ISSN: 0003-6951, Vol: 104, Issue: 6
2014
  • 12
    Citations
  • 0
    Usage
  • 17
    Captures
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Metrics Details

  • Citations
    12
    • Citation Indexes
      12
  • Captures
    17

Article Description

We report a field-effect approach to enhance the electroluminescence (EL) from a model Si nanocrystal light-emitting device (Si-NC LED). The field effects are established within the carrier injection regions of the LEDs via introducing an i-type Si layer on the top of active layer and an AlO layer between the active layer and the Si substrate. The fields are consistent in polarity with the forwardly biased electric field within the LEDs. One order of magnitude increases in the EL intensity from Si-NC LED are readily achieved after introducing the field effects.

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