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Current induced doping in graphene-based transistor with asymmetrical contact barriers

Applied Physics Letters, ISSN: 0003-6951, Vol: 104, Issue: 8
2014
  • 9
    Citations
  • 0
    Usage
  • 18
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    9
    • Citation Indexes
      9
  • Captures
    18

Article Description

The metal/graphene contacts play a very important role in the performance of graphene-based devices. We report here a unique observation of current-induced doping in graphene transistors. The charge carrier type and the concentration in graphene can be manipulated by the current flowing through the graphene device, arising from the asymmetrical metal/graphene barriers between the source and drain electrodes and the accompanied current crowding effect. © 2014 AIP Publishing LLC.

Bibliographic Details

Wei Chen; Shiqiao Qin; Xue Ao Zhang; Sen Zhang; Jingyue Fang; Guang Wang; Li Wang; Shengli Chang; Chaocheng Wang

AIP Publishing

Physics and Astronomy

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