Current induced doping in graphene-based transistor with asymmetrical contact barriers
Applied Physics Letters, ISSN: 0003-6951, Vol: 104, Issue: 8
2014
- 9Citations
- 18Captures
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Article Description
The metal/graphene contacts play a very important role in the performance of graphene-based devices. We report here a unique observation of current-induced doping in graphene transistors. The charge carrier type and the concentration in graphene can be manipulated by the current flowing through the graphene device, arising from the asymmetrical metal/graphene barriers between the source and drain electrodes and the accompanied current crowding effect. © 2014 AIP Publishing LLC.
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