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Hydrogen-doping stabilized metallic VO (R) thin films and their application to suppress Fabry-Perot resonances in the terahertz regime

Applied Physics Letters, ISSN: 0003-6951, Vol: 104, Issue: 24
2014
  • 49
    Citations
  • 0
    Usage
  • 36
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    49
    • Citation Indexes
      49
  • Captures
    36

Article Description

We demonstrate that catalyst-assisted hydrogen spillover doping of VO thin films significantly alters the metal-insulator transition characteristics and stabilizes the metallic rutile phase at room temperature. With hydrogen inserted into the VO lattice, high resolution X-ray diffraction reveals expansion of the V-V chain separation when compared to the VO(R) phase. The donated free electrons, possibly from O-H bond formation, stabilize the VO(R) to low temperatures. By controlling the amount of dopants to obtain mixed insulating and metallic phases, VO resistivity can be continuously tuned until a critical condition is achieved that suppresses Fabry-Perot resonances. Our results demonstrate that hydrogen spillover is an effective technique to tune the electrical and optical properties of VO thin films. © 2014 AIP Publishing LLC.

Bibliographic Details

Yong Zhao; Xuan Pan; Ayrton A. Bernussi; Zhaoyang Fan; Gulten Karaoglan-Bebek; Mark Holtz

AIP Publishing

Physics and Astronomy

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