The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb(ZrTi)TiO thin films
Applied Physics Letters, ISSN: 0003-6951, Vol: 105, Issue: 2
2014
- 12Citations
- 18Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
We study the effects of strain relaxation on the dielectric properties of epitaxial 40 nm Pb(ZrTi)TiO (PZT) films. A significant increase in the defect and dislocation density due to strain relaxation is observed in PZT films with tetragonality c/a < 1.07 grown on SrTiO (001) substrates, which results in significant frequency dispersion of the dielectric constant and strong Rayleigh type behavior in those samples. This combined structural-electrical study provides a framework for investigating strain relaxation in thin films and can provide useful insights into the mechanisms of fatigue in ferroelectric materials. © 2014 AIP Publishing LLC.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84904739882&origin=inward; http://dx.doi.org/10.1063/1.4885551; https://pubs.aip.org/apl/article/105/2/022903/240787/The-effects-of-strain-relaxation-on-the-dielectric; http://scitation.aip.org/content/aip/journal/apl/105/2/10.1063/1.4885551; http://scitation.aip.org/limit_exceeded.html
AIP Publishing
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know