Important role of the non-uniform Fe distribution for the ferromagnetism in group-IV-based ferromagnetic semiconductor GeFe
Journal of Applied Physics, ISSN: 1089-7550, Vol: 116, Issue: 17
2014
- 9Citations
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Article Description
We investigate the growth-temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor GeFe films (x = 6.5% and 10.5%), and reveal the correlation of the magnetic properties with the lattice constant, Curie temperature (T), non-uniformity of Fe atoms, stacking-fault defects, and Fe-atom locations. While T strongly depends on the growth temperature, we find a universal relationship between T and the lattice constant, which does not depend on the Fe content x. By using the spatially resolved transmission-electron diffractions combined with the energy-dispersive X-ray spectroscopy, we find that the density of the stacking-fault defects and the non-uniformity of the Fe concentration are correlated with T. Meanwhile, by using the channeling Rutherford backscattering and particle-induced X-ray emission measurements, we clarify that about 15% of the Fe atoms exist on the tetrahedral interstitial sites in the GeFe lattice and that the substitutional Fe concentration is not correlated with T. Considering these results, we conclude that the non-uniformity of the Fe concentration plays an important role in determining the ferromagnetic properties of GeFe.
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