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Hysteresis free carbon nanotube thin film transistors comprising hydrophobic dielectrics

Applied Physics Letters, ISSN: 0003-6951, Vol: 107, Issue: 24
2015
  • 34
    Citations
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  • 61
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Metrics Details

  • Citations
    34
    • Citation Indexes
      34
  • Captures
    61

Article Description

We present two examples of carbon nanotube network thin film transistors with strongly hydrophobic dielectrics comprising either Teflon-AF or a poly(vinylphenol)/poly(methyl silsesquioxane) (PVP/pMSSQ) blend. In the absence of encapsulation, bottom gated transistors in air ambient show no hysteresis between forward and reverse gate sweep direction. Device threshold gate voltage and On-current present excellent time dependent stability even under dielectric stress. Furthermore, threshold gate voltage for hole conduction is negative upon device encapsulation with PVP/pMSSQ enabling much improved current On/Off ratio at 0 V. This work addresses two major challenges impeding solution based fabrication of relevant thin film transistors with printable single-walled carbon nanotube channels.

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