Thickness-dependent dielectric and energy storage properties of (PbLa)(ZrTi)O antiferroelectric thin films
Journal of Applied Physics, ISSN: 1089-7550, Vol: 119, Issue: 12
2016
- 59Citations
- 27Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
A series of dense and uniform (PbLa)(ZrTi)O (PLZT) thin films with different thicknesses have been deposited on (LaSr)MnO/SrTiO substrates by a modified chemical solution deposition method. Structural and electrical studies indicate that PLZT thin films show single phase composition and typical antiferroelectric (AFE) characteristics. By increasing the film thickness, the dielectric loss of PLZT thin films is reduced and the hysteresis loops are tailored. The energy storage efficiency increases from 56.8% to 74.1%, while a high energy density of ∼20J/cm is maintained under an electric field of 1200kV/cm. Additionally, the operating frequencies also have distinct influence on the hysteresis loop shape and the energy storage properties, indicating that energy storage performance of AFE thin films can be enhanced by tuning both film thickness and operating frequencies.
Bibliographic Details
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know