High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO/HfO versus SiO/SiN
Journal of Applied Physics, ISSN: 1089-7550, Vol: 120, Issue: 9
2016
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Article Description
SiO/SiN and SiO/HfO distributed Bragg reflectors for the ultra-violet (λ = 360 nm-380 nm) are compared through their structural and optical properties. The SiO/HfO system exhibits a lower interface roughness, higher reflectance, larger stop band, and lower penetration depth than SiO/SiN. A cavity quality factor of 3700 at about 360 nm is measured on a passive SiO/HfO-based planar microcavity. Compared with values obtained in the literature for the near UV range, the latter is rather large. Micro-reflectance measurements have been performed on a series of passive microcavities with increasing cavity thickness to determine the residual absorption in the SiO and HfO layers. Absorption coefficients of 30 (k = 0.86 × 10) and 160 cm (k = 4.59 × 10) near λ ∼ 360 nm have been extracted for SiO and HfO, respectively. Transfer-matrix simulations taking into account the residual absorption show that microcavity quality factors up to 8000 can be expected at 360-380 nm with this material system. Such values are well-suited for the fabrication of UV-vertical cavity surface emitting lasers or microcavity polariton lasers operating at room temperature.
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