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Electrical performance and low frequency noise in hexagonal boron nitride encapsulated MoSe dual-gated field effect transistors

Applied Physics Letters, ISSN: 0003-6951, Vol: 111, Issue: 8
2017
  • 22
    Citations
  • 0
    Usage
  • 47
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    22
    • Citation Indexes
      22
  • Captures
    47

Article Description

We demonstrate few-layer molybdenum diselenide (MoSe) dual-gated field effect transistors (FETs) with few-layer hexagonal boron nitride (hBN) flakes as encapsulation and multilayer graphene as electrical contacts. A high current on/off ratio of up to ∼10, a two-terminal electron mobility of 38.5 cm/V·s at room temperature, and negligible hysteresis are achieved in hBN encapsulated MoSe FETs. Our results also indicate that the flicker (1/f) current noise in hBN encapsulated MoSe transistors is governed by Hooge's carrier mobility fluctuation and the normalized current noise in the dual-gated configuration can be dramatically reduced by applying a positive bias on the bottom gate. All these suggest that dual-gated MoSe FETs are very promising candidates for sensing applications.

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