Vacancy defects and optoelectrical properties for fluorine tin oxide thin films with various SnF contents
Journal of Applied Physics, ISSN: 1089-7550, Vol: 123, Issue: 2
2018
- 14Citations
- 18Captures
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Article Description
Fluorine doped tin oxide (FTO) thin films were deposited on glass substrates by e-beam evaporation. Much higher carrier concentration, broader optical band gap, and average transmittance over 80% were obtained with SnF doped SnO thin films. Positron annihilation results showed that there are two kinds of vacancy clusters with different sizes existing in the annealed FTO thin films, and the concentration of the larger vacancy clusters of V in the thin films increases with increasing SnF contents. Meanwhile, photoluminescence spectra results indicated that the better electrical and optical properties of the FTO thin films are attributed to F substitutions and oxygen vacancies with higher concentration, which are supported by positron annihilation Doppler broadening results and confirmed by X-ray photoelectron spectroscopy. The results showed that widening of the optical band gap of the FTO thin films strongly depends on the carrier concentration, which is interpreted for the Burstein-Moss effect and is associated with the formation of F and oxygen vacancies with increasing SnF content.
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