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Erratum: Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects (Journal of Applied Physics (2016) 120 (245705) DOI: 10.1063/1.4972968)

Journal of Applied Physics, ISSN: 1089-7550, Vol: 123, Issue: 8
2018
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Correction Description

The grant number for one of the funding agencies was incorrectly stated in the original article.1 The correct and appropriate grant number in the acknowledgment should read as follows: This work was supported in part by the Office of Naval Research under Grant No. N00014-15-1-2650 and AFOSR Grant No. FA9550-14-1-0019.

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