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Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams

Applied Physics Letters, ISSN: 0003-6951, Vol: 112, Issue: 18
2018
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Metrics Details

  • Citations
    9
    • Citation Indexes
      9
  • Captures
    15

Article Description

The impact of nitridation on open spaces in thin AlON films deposited by a reactive sputtering technique was studied by using monoenergetic positron beams. For AlON films with x = 0%-15%, positrons were found to annihilate from trapped states in open spaces, which coexist intrinsically in an amorphous structure with three different sizes. Nitrogen incorporation into the AlO film increased the size of the open spaces, and their density increased as the post-deposition annealing temperature increased. The effect of nitrogen incorporation, however, diminished at x = 25%. The observed change in the network structure was associated with the formation of a stable amorphous structure, which we could relate to the electrical properties of AlON/SiO/Si gate stacks.

Bibliographic Details

Uedono, Akira; Yamada, Takahiro; Hosoi, Takuji; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Watanabe, Heiji

AIP Publishing

Physics and Astronomy

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