Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond
Applied Physics Letters, ISSN: 0003-6951, Vol: 114, Issue: 20
2019
- 7Citations
- 26Captures
- 1Mentions
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Article Description
We demonstrate the application of the two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond. The charge carriers, inside the scCVD diamond sample, are excited by a femtosecond laser through simultaneous absorption of two photons. Due to the nature of two-photon absorption, the generation of charge carriers is confined in space (3-dimensional, 3-D) around the focal point of the laser. Such localized charge injection allows us to probe the charge transport properties of the semiconductor bulk with a fine-grained 3-D resolution. Exploiting spatial confinement of the generated charge, the electrical field of the diamond bulk was mapped at different depths and compared to an X-ray diffraction topograph of the sample. Measurements utilizing this method provide a unique way of exploring spatial variations of charge transport properties in transparent wide-bandgap semiconductors.
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