PlumX Metrics
Embed PlumX Metrics

Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond

Applied Physics Letters, ISSN: 0003-6951, Vol: 114, Issue: 20
2019
  • 7
    Citations
  • 0
    Usage
  • 26
    Captures
  • 1
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    7
    • Citation Indexes
      7
  • Captures
    26
  • Mentions
    1
    • References
      1
      • Wikipedia
        1

Article Description

We demonstrate the application of the two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond. The charge carriers, inside the scCVD diamond sample, are excited by a femtosecond laser through simultaneous absorption of two photons. Due to the nature of two-photon absorption, the generation of charge carriers is confined in space (3-dimensional, 3-D) around the focal point of the laser. Such localized charge injection allows us to probe the charge transport properties of the semiconductor bulk with a fine-grained 3-D resolution. Exploiting spatial confinement of the generated charge, the electrical field of the diamond bulk was mapped at different depths and compared to an X-ray diffraction topograph of the sample. Measurements utilizing this method provide a unique way of exploring spatial variations of charge transport properties in transparent wide-bandgap semiconductors.

Bibliographic Details

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know