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Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

Journal of Applied Physics, ISSN: 1089-7550, Vol: 125, Issue: 22
2019
  • 8
    Citations
  • 0
    Usage
  • 17
    Captures
  • 1
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    8
    • Citation Indexes
      8
  • Captures
    17
  • Mentions
    1
    • News Mentions
      1
      • 1

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Article Description

Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJs) is proposed as a way to increase magnetic random access memory (MRAM) storage density. A multibit storage element is designed using pMTJs fabricated on a single wafer stack, with serial connections realized using top-to-bottom vias. The tunneling magnetoresistance effect above 130%, current induced magnetization switching in zero external magnetic field, and stability diagram analysis of single, two-bit, and three-bit cells are presented together with thermal stability. The proposed design is easy to manufacture and can lead to an increased capacity of future MRAM devices.

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