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Shallow p-type layers in InP by Hg implantation

Applied Physics Letters, ISSN: 0003-6951, Vol: 48, Issue: 2, Page: 154-156
1986
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Metrics Details

  • Citations
    10
    • Citation Indexes
      10

Article Description

Ion implantation of mercury in n-type and semi-insulating indium phosphide is reported in InP. We show how mercury behaves in InP in terms of type of dopant, electrical activity, and diffusivity. Implanted mercury impurity behaves as an acceptor dopant in InP. Thin p-type layers have been obtained. Mercury profiles and electrical profiles show that mercury does not diffuse towards the bulk during annealing; therefore, mercury implantation can be a valuable technique in realizing shallow p-type layers in indium phosphide.

Bibliographic Details

P. N. Favennec; H. L'Haridon; J. M. Roquais; M. Salvi; X. Le Cleach; L. Gouskov

AIP Publishing

Physics and Astronomy

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