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Printable ion-gel-gated InOsynaptic transistor array for neuro-inspired memory

Applied Physics Letters, ISSN: 0003-6951, Vol: 120, Issue: 23
2022
  • 31
    Citations
  • 0
    Usage
  • 5
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    31
    • Citation Indexes
      31
  • Captures
    5

Article Description

With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of >1 V, a steep back sweep subthreshold swing of <60 mV/decade, and a nonvolatile memory behavior, showing that the screen-printed ion-gel has satisfactory uniformity in large scale. In addition, short-term to long-term plasticity, paired-pulse facilitation, and spike-rate-dependent plasticity are simulated. Based on the plasticity regulated with the spike frequency, a high-pass filter was realized. Flash memory as a special memory model in the nervous system has been simulated in the array. This study provides a unique platform for designing high-performance, repeatable, and stable artificial synapses for the neuromorphic system.

Bibliographic Details

Chenxing Jin; Wanrong Liu; Yulong Huang; Yunchao Xu; Yiling Nie; Gengming Zhang; Pei He; Jia Sun; Junliang Yang

AIP Publishing

Physics and Astronomy

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