Printable ion-gel-gated InOsynaptic transistor array for neuro-inspired memory
Applied Physics Letters, ISSN: 0003-6951, Vol: 120, Issue: 23
2022
- 31Citations
- 5Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of >1 V, a steep back sweep subthreshold swing of <60 mV/decade, and a nonvolatile memory behavior, showing that the screen-printed ion-gel has satisfactory uniformity in large scale. In addition, short-term to long-term plasticity, paired-pulse facilitation, and spike-rate-dependent plasticity are simulated. Based on the plasticity regulated with the spike frequency, a high-pass filter was realized. Flash memory as a special memory model in the nervous system has been simulated in the array. This study provides a unique platform for designing high-performance, repeatable, and stable artificial synapses for the neuromorphic system.
Bibliographic Details
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know