Defect engineered blue photoluminescence in ZnO:Al/TiOheterostructures

Tailoring the blue photoluminescence (PL) in Al-doped ZnO (AZO)/TiO2 heterostructures is demonstrated by a controlled induction of shallow defect centers by 50 keV Ar+-ions. This is established by a combination of temperature dependent PL and electron paramagnetic resonance spectroscopy. The dominant blue-violet PL in an as-grown sample comprises a near band-edge emission, along with a peak associated with a radiative recombination of the electrons in shallow donor levels (Zn interstitials) and the holes from the valence band. However, the evolution of an additional yellow-green PL band at a fluence of 1 × 1015 ions/cm2 is governed by deep donor levels, particularly ionized oxygen vacancies. Irradiation at 1 × 1016 ions/cm2 further leads to the formation of Zn vacancies (shallow acceptors) owing to the development of an O-rich surface. The structural modifications of these samples have been investigated by field-emission scanning electron microscopy, transmission electron microscopy, and Rutherford backscattering. While small micro-cracks are found at a fluence of 2 × 1016 ions/cm2, the formation of graded layers is obtained at the highest fluence of 5 × 1016 ions/cm2 owing to ballistic intermixing and diffusion of the constituents. Detailed investigation suggests that a significant amount of Ti atoms is diffused in AZO by a complete deterioration of the AZO/TiO2 matrix at the highest fluence.