Characterization Using SEM and Testing the Sensing Properties of Chitosan Film Sensors with the Addition of Tin Oxide

In this research, the sensing properties of the chitosan film sensor were successfully improved by adding Tin Oxide (SnO). The addition of SnO concentration to the chitosan solution was 0.01%, 0.05% 0.1% and 0.5% (w / v). The sensor is fabricated in the form of a film using the electrodeposition method. The sensing properties of chitosan and chitosan-SnO film sensors was carried out by exposing acetone gas with concentrations of 0.5 ppm, 1 ppm, 1.5 ppm, 2 ppm, 2.5 ppm and 3 ppm. The results of testing show the response and repeatability properties of chitosan film produced the highest output voltage of 514 mV at 1.5 ppm while the lowest output voltage value was 499.72 at 0.5 ppm. The addition of SnO with the highest concentration of 0.5% increased the response and repeatability properties in the form of the highest output voltage to 569.34 mV at 3 ppm while the SnO concentration of 0.01% resulted in the lowest sensor output voltage of 504.84 mV at 0.5 ppm. The SEM characterization results showed that the addition of SnO increased the number of pores formed on the film which strengthened the ability to absorb acetone. Therefore, chitosan film sensor with the addition of SnO concentration showed better sensing properties than chitosan film which show the potential to be applied as an acetone gas sensor.