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The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers

Quantum Electronics, ISSN: 1468-4799, Vol: 50, Issue: 5, Page: 489-492
2020
  • 4
    Citations
  • 0
    Usage
  • 3
    Captures
  • 0
    Mentions
  • 62
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    4
    • Citation Indexes
      4
  • Captures
    3
  • Social Media
    62
    • Shares, Likes & Comments
      62
      • Facebook
        62

Article Description

The influence of doping of waveguide layers on the output characteristics of lasers based on AlGaAs/GaAs double separate-confinement heterostructures is analysed. The heterostructures with narrow and broadened waveguides are studied. Samples of laser diode bars with undoped and doped waveguide layers are experimentally fabricated and compared. It is shown that the latter type of structures with a broadened waveguide allows one to increase the output power of the laser diode bars by 10 % - 15 %, all other conditions being equal.

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