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Dye-sensitized solar cells based on nanostructured semiconductor oxide ceramics with ultra-thin barrier layers

Integrated Ferroelectrics, ISSN: 1058-4587, Vol: 115, Issue: 1, Page: 120-131
2010
  • 7
    Citations
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  • 16
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    7
    • Citation Indexes
      7
  • Captures
    16

Conference Paper Description

Nanostructured high band-gap oxide semiconductor ceramics are extensively investigated to understand their unique properties and applications in dye-sensitized solar cells, sensors, supercapacitors and other electronic and electrochemical devices. The unusual properties of these materials originate from large surface-area to bulk-volume ratio, quantum size effects and formation of space charge layers of dimensions comparable to the crystallite size in depletion of carriers. A prototype device demonstrating the unique properties of nanostructured semiconductor ceramics is the dye-sensitized solar cell. The original version of this device is based on TiO and other familiar stable oxides SnO and ZnO yield lower efficiencies owing to faster recombination. SnO admits faster electron transport because of the lower effective electron mass, but the same property enhances recombination. Ultra-thin barrier layers insulating stannates coated over the SnO crystallites by glazing with alkaline earth chlorides increases the efficiency from ∼ 1 to 6.6%. Copyright © Taylor & Francis Group, LLC.

Bibliographic Details

K. Tennakone; G. L. M. P. Apsonsu; Y. P. Y. P. Ariyasinghe; R. C. Buchanan; V. P. S. Perera; H. Tennakone; T. R. C. K. Wijayarathna

Informa UK Limited

Materials Science; Engineering; Physics and Astronomy

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