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Growth of β-GaO Films on Sapphire by Hydride Vapor Phase Epitaxy

Chinese Physics Letters, ISSN: 1741-3540, Vol: 35, Issue: 5, Page: 058101-1-058101-3
2018
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Two-inch GaO films with (201)-orientation are grown on c-sapphire at 850-1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-GaO with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-GaO grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 eV.

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