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Effective mass dependence on the wavenumber and the energy in semiconductors

Semiconductor Science and Technology, ISSN: 0268-1242, Vol: 11, Issue: 9, Page: 1251-1254
1996
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Article Description

In this work we present a method of calculation of the effective mass tensor and the dependence of the non-parabolicity parameters on the wavenumber and the energy. We apply this method to obtain these parameters for several bands in Si, Ge and GaAs. This method reveals correctly the properties of the bands and agrees with the expressions and results obtained with a k · p method.

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