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Radiative recombination processes in ZnMgSe layers

Semiconductor Science and Technology, ISSN: 0268-1242, Vol: 12, Issue: 3, Page: 272-279
1997
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  • Citations
    14
    • Citation Indexes
      14

Article Description

Luminescence properties of ZnMgSe layers obtained by thermal diffusion of the isoelectronic substituent Mg into ZnSe single crystals have been studied. Mg easily substitutes Zn during thermal annealing of ZnSe in Mg vapour, forming a ZnMgSe mixed crystal layer. The samples show a graded bandgap due to different Mg concentrations in the Mg-diffused surface region. At low temperatures the photoluminescence spectra of such ZnMgSe mixed crystals are dominated by blue-violet emission due to recombination of excitons and shallow donor-acceptor pairs. The influence of Mg diffusion conditions on luminescence properties was investigated and possible mechanisms involved in radiative recombination processes were discussed in terms of exciton and carrier localization due to random potential fluctuations in disordered mixed crystals. In-ZnSe-ZnMgSe-Au electroluminescent structures have been obtained and blue-violet and green electroluminescence in the temperature range from 40 K to room temperature was observed.

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