Monte Carlo simulation of high-field transport and impact ionization in AlGaAs pin diodes
Semiconductor Science and Technology, ISSN: 0268-1242, Vol: 14, Issue: 11, Page: 994-1000
1999
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Article Description
We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlGaAs and also submicron pin diodes for x ≤ 40%. The calculated impact ionization rates in bulk AlGaAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the pin diodes were found to agree very well with our experimental results for both the analytical and the numerical models.
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