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Monte Carlo simulation of high-field transport and impact ionization in AlGaAs pin diodes

Semiconductor Science and Technology, ISSN: 0268-1242, Vol: 14, Issue: 11, Page: 994-1000
1999
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Article Description

We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlGaAs and also submicron pin diodes for x ≤ 40%. The calculated impact ionization rates in bulk AlGaAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the pin diodes were found to agree very well with our experimental results for both the analytical and the numerical models.

Bibliographic Details

G. M. Dunn; R. Ghin; G. J. Rees; J. P.R. David; S. Plimmer; D. C. Herbert

IOP Publishing

Materials Science; Physics and Astronomy; Engineering

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