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Influence of copper precipitation on oxygen precipitation in Czochralski silicon

Semiconductor Science and Technology, ISSN: 0268-1242, Vol: 19, Issue: 3, Page: 299-305
2004
  • 16
    Citations
  • 0
    Usage
  • 6
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    16
    • Citation Indexes
      16
  • Captures
    6

Article Description

The influence of copper precipitation on oxygen precipitation in Czochralski-grown silicon was investigated by Fourier transform infrared spectroscopy, defect etching and transmission electron microscopy combined with energy dispersive x-ray analysis. It was found that interstitial copper almost had no influence on oxygen precipitation but copper precipitation remarkably enhanced oxygen precipitation. Furthermore, the enhancement of copper precipitation under air cooling (30 K s) on oxygen precipitation subsequently was much more noticeable than that of copper precipitation under slow cooling (0.3 K s). It was also observed that the dislocations induced by oxygen precipitates occurred in the samples without copper contamination, but in the samples experiencing copper precipitation, oxygen preferably precipitated on the dislocations induced by copper precipitates, or dislocation-free oxygen precipitates occurred. These results indicate that heterogeneous nucleation of oxygen precipitates on dislocations and successful release of the stress from oxygen precipitation are responsible for the enhancement of oxygen precipitation.

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