Hot-phonon lifetime in a modulation-doped AlInAs/GaInAs/AlInAs/InP
Semiconductor Science and Technology, ISSN: 0268-1242, Vol: 20, Issue: 2, Page: 109-114
2005
- 21Citations
- 7Captures
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Article Description
The experimental dependence of microwave noise temperature on supplied electric power is used to study hot phonons in an InP-based modulation-doped InAlAs/InGa As/InGaAs/InAl As heterostructure with a two-dimensional electron gas channel (n = 2.3 × 10 cm). The effective hot-phonon temperature is extracted for two-subband and six-subband models treated in the electron-temperature approximation. The estimated value for the hot-phonon lifetime with respect to the longitudinal optical phonon conversion into other vibration modes is (0.9 ± 0.3) ps at room temperature.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=13644279558&origin=inward; http://dx.doi.org/10.1088/0268-1242/20/2/001; https://iopscience.iop.org/article/10.1088/0268-1242/20/2/001; https://dx.doi.org/10.1088/0268-1242/20/2/001; https://validate.perfdrive.com/9730847aceed30627ebd520e46ee70b2/?ssa=c7406c84-a3e8-4e4a-9b29-aed758ab79d3&ssb=10131282699&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1088%2F0268-1242%2F20%2F2%2F001&ssi=4788c1af-cnvj-4b3e-9859-872ec0e7ef6e&ssk=botmanager_support@radware.com&ssm=681843858743921121342991339963384419&ssn=2492a26529298a8af55a9fac77fcbce10569fe105911-65fe-48dc-86f020&sso=4d3f1150-9319bfde79b5e45773fad02b145a106c4682267ba4f83c6d&ssp=11095546511726204652172635490661079&ssq=24949649249158962405963731228452137421113&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJfX3V6bWYiOiI3ZjYwMDBmY2NjNzQxOC1mYzFiLTRjNmEtODMwYS1iMjY5YmYxNWM5NTIxNzI2MjYzNzMxNDQwMTI4NzYwMzE3LTI3MmQ4YTZkOGYyNThkNWIxMzQyNzgiLCJyZCI6ImlvcC5vcmciLCJ1em14IjoiN2Y5MDAwMzZjZDcxYjQtYzE1Yy00OTVhLWFjNjEtNTM4YWIxMWM0ZjdhMy0xNzI2MjYzNzMxNDQwMTI4NzYwMzE3LTJiNDU1ODE4ZDE4YzY5YjgxMzQyNjYifQ==
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