An analysis of AC surface photovoltages for obtaining surface recombination velocities in silicon wafers
Semiconductor Science and Technology, ISSN: 0268-1242, Vol: 5, Issue: 3, Page: 206-210
1990
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Article Description
Analytical equations for obtaining surface recombination velocity are proposed. AC surface photovoltages in strongly inverted silicon wafers are governed by the frequency response of the strong inversion layer, which is characterised by an inversion time constant. Based on the assumption that the strong inversion layer communicates only with the interface traps, the inversion time constant should give the surface recombination velocity when the inversion layer charge density is known. Trials of the present method have shown reasonable results when applied to previous experiments.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0025398883&origin=inward; http://dx.doi.org/10.1088/0268-1242/5/3/004; https://iopscience.iop.org/article/10.1088/0268-1242/5/3/004; http://stacks.iop.org/0268-1242/5/i=3/a=004/pdf; https://dx.doi.org/10.1088/0268-1242/5/3/004; https://validate.perfdrive.com/fb803c746e9148689b3984a31fccd902/?ssa=f7e26836-17db-436a-85f8-8044a432b8e6&ssb=42813267392&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1088%2F0268-1242%2F5%2F3%2F004&ssi=eba80aa0-8427-4f88-b3e4-227014340cbd&ssk=support@shieldsquare.com&ssm=11403826947827179413447637070017958&ssn=b65c3eaf300495bd7f0dd86d3b594782ca30a8346d90-060e-4e11-95ba4c&sso=bd0b2c11-d2b2d61f71a34c72613ae5819365e52b2017e51ed9278b29&ssp=62942081661720700692172123779062568&ssq=56620070983361370702356658964743784443506&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJ1em14IjoiN2Y5MDAwYTU5ODA5NjctMzAwZS00NmVkLTkwNTMtMTdjYjY1NGQ4ZmRiNi0xNzIwNzU2NjU4MDQ0NDUzMTc1NzgyLWEwNmYzOTg4MjdjOTkwZTE0MTM0NCIsIl9fdXptZiI6IjdmNjAwMDdkYWZkYTcyLTQ1YmMtNDc0My05NDc1LTg3NjNlNzIzODRhNDE3MjA3NTY2NTgwNDQ0NTMxNzU3ODItZmU4NWYzMDFmNzllZTcwNzQxMzQ0IiwicmQiOiJpb3Aub3JnIn0=
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