Effective masses and g factors for 2D light holes in InSb
Semiconductor Science and Technology, ISSN: 0268-1242, Vol: 5, Issue: 3 S, Page: S192-S194
1990
- 2Citations
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Article Description
The light holes in InSb are characterised using a Shubnikov-de Haas technique by exploiting the type II band offset of an InAsSb /InSb strained-layer superlattice. The data are analysed to determine the effective masses and g factors as a function of carrier concentration.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=36149036116&origin=inward; http://dx.doi.org/10.1088/0268-1242/5/3s/042; http://stacks.iop.org/0268-1242/5/i=3S/a=042?key=crossref.20c0866beabd7799280f66ebb66166d4; https://iopscience.iop.org/article/10.1088/0268-1242/5/3S/042; http://stacks.iop.org/0268-1242/5/i=3S/a=042/pdf; https://dx.doi.org/10.1088/0268-1242/5/3s/042; https://validate.perfdrive.com/fb803c746e9148689b3984a31fccd902/?ssa=1e9e9229-2960-4285-9246-34c3fabb5b6f&ssb=87440202960&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1088%2F0268-1242%2F5%2F3S%2F042&ssi=51013230-8427-4580-b369-5f5212bba998&ssk=support@shieldsquare.com&ssm=68203030681115266267799973421513405&ssn=6c5ebf7b94cc1d4c3c1817614f22a3b1642e2f0fbc69-9e01-4767-9907fb&sso=6c6b1809-259ac1c821e1929879a507ab88a4dc3ddbf8dcf58fa61790&ssp=18065657081721205771172133260643419&ssq=28305470505282897882136784585253530606769&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJfX3V6bWYiOiI3ZjYwMDBkOTY2YjBkNC1iNDc3LTQzMmYtYmU0My0xZTA0NjEwMTgxNzgxNzIxMjM2Nzg0NTAyNjgyNjc2MTktOTNmNDQ5NTM4NjQ1NDIxYzI2Nzc5IiwicmQiOiJpb3Aub3JnIiwidXpteCI6IjdmOTAwMGM0YTkyODFhLTVmYzEtNGRmMy1iODc2LWI5NjdkODk1YjkyNTItMTcyMTIzNjc4NDUwMjY4MjY3NjE5LTBjYWQ0MmM0YjMwMzlhNzIyNjc3OSJ9
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