Effects of la dilution on the CePtSi Kondo lattice

Electrical resistivity (ρ(T)) and magnetoresistivity (MR) measurements are presented for the (CeLa)PtSi alloy system. ρ(T) data at low temperatures for alloys in the concentrated Kondo lattice regime 0≤x≤0.2 conform to a ρ(T) = ρ+AT dependence and Fermi-liquid parameters A and T are presented. The maximum that occurs in ρ(T) in the concentrated Kondo lattice regime at a temperature of T is no longer observed for samples with x≥0.3 which show single-ion Kondo behaviour. MR measurements on alloys with x = 0.5, 0.7 and 0.9 yield values of the Kondo temperature T through Schlottmann analysis. The dependences of A, T and T on x are discussed in terms of the volume and Kondo hole effects occurring upon alloying. Anomalies in ρ(T) for LaPt Si and some of the alloy samples are also reported. © 2008 IOP Publishing Ltd.