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An investigation of the rate of Si self-interstitial annihilation at dislocations

Journal of Physics Condensed Matter, ISSN: 0953-8984, Vol: 8, Issue: 31, Page: 5685-5690
1996
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Article Description

Two different approaches are proposed for calculating the dislocation sink efficiency γ for silicon self-interstitials: a numerical calculation and an analytical approach, the results of which are very close. The differences between the calculated and measured values of γ is interpreted in terms of the effective dislocation density, and this new hypothesis is introduced in the analytical model leading in a first approximation to a linear relationship between γ and the proportion of mobile dislocations (via a climbing process).

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