An investigation of the rate of Si self-interstitial annihilation at dislocations
Journal of Physics Condensed Matter, ISSN: 0953-8984, Vol: 8, Issue: 31, Page: 5685-5690
1996
- 6Citations
- 5Captures
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Article Description
Two different approaches are proposed for calculating the dislocation sink efficiency γ for silicon self-interstitials: a numerical calculation and an analytical approach, the results of which are very close. The differences between the calculated and measured values of γ is interpreted in terms of the effective dislocation density, and this new hypothesis is introduced in the analytical model leading in a first approximation to a linear relationship between γ and the proportion of mobile dislocations (via a climbing process).
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0030190596&origin=inward; http://dx.doi.org/10.1088/0953-8984/8/31/001; https://iopscience.iop.org/article/10.1088/0953-8984/8/31/001; https://dx.doi.org/10.1088/0953-8984/8/31/001; https://validate.perfdrive.com/fb803c746e9148689b3984a31fccd902/?ssa=d109ae64-a16b-4f70-8ea5-6bc2a200d1d9&ssb=93761203572&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1088%2F0953-8984%2F8%2F31%2F001&ssi=8938cc1e-8427-449a-9e6d-dfebe0ec1aaf&ssk=support@shieldsquare.com&ssm=455450411403818951691351025947297552&ssn=887df2ee7d21dd3fadf6efcd8ffca6ff71de17f9ea44-4e1f-4e35-b9c3b8&sso=6e00615e-f9d9f87a371f59d2a3f23dd91d9eedeb30cdf50b275cceb4&ssp=25183020941719375134171985873068983&ssq=19949949441829196386905699671625158894527&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJyZCI6ImlvcC5vcmciLCJ1em14IjoiN2Y5MDAwMWUxYTVkMGQtYjRlNi00ZTQ0LWFmYTgtNzUxMTFmZjg0ZDlmOC0xNzE5MzA1Njk5NDA1NTg4NzE5MDE1LWRjZmM0MjAzNThlM2FmNzAxNjkxMjAiLCJfX3V6bWYiOiI3ZjYwMDBjMGI2MzM1NC00OGRkLTRjNTUtODVmZS00NzZmMjgxYzE5ZDgxNzE5MzA1Njk5NDA1NTg4NzE5MDE1LTJjODlhODczNjdmNWMyYzcxNjkxMjMifQ==
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