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Segregation-controlled kinetics of fast impurity diffusion in polycrystalline solids

Journal of Physics Condensed Matter, ISSN: 0953-8984, Vol: 8, Issue: 32, Page: 5843-5856
1996
  • 12
    Citations
  • 0
    Usage
  • 5
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    12
    • Citation Indexes
      12
  • Captures
    5

Article Description

Commonly, the presence of grain boundaries in crystalline solids leads to enhanced atomic transport because atoms can move faster along such two-dimensional lattice defects than through the lattice itself. Recent experiments on gold diffusion into silicon, however, showed for the first time a retardation of the metallic impurity incorporation in polycrystalline material compared to that of monocrystals of the same host. The present paper provides a new model that accounts for the experimental findings with regard to Si:Au. In addition, it may apply to other systems in which a high mobility of the impurity in the lattice goes along with extremely strong segregation effects.

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