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Characterisation of sol-gel PZT films on Pt-coated substrates

Journal of Micromechanics and Microengineering, ISSN: 0960-1317, Vol: 5, Issue: 2, Page: 153-155
1995
  • 11
    Citations
  • 0
    Usage
  • 4
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    11
    • Citation Indexes
      11
  • Captures
    4

Article Description

A conventional sol-gel process was used to spin-cast PZT films on oxidized Si wafers coated with sputtered Pt layers. After annealing at 550 degrees C-800 degrees C, the resulting perovskite-type PZT films showed different textures and surface morphologies, depending on whether or not a Ti adhesion layer was used. If a Ti layer was present, Ti diffusion into and through the Pt film leads to a compound PtTi, which facilitates crystallization of the perovskite PZT phase; without Ti, crystallization is more difficult and occurs via the growth of dendritic crystallites. Several optical and electrical properties of the PZT films have been measured; the first results indicate high dielectric constants ( epsilon approximately=480) and acceptable ferroelectric behaviour.

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