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Carrier free long-range magnetism in Mo doped one quintuple layer BiTe and SbTe

Journal of Physics Condensed Matter, ISSN: 1361-648X, Vol: 32, Issue: 6, Page: 065801
2020
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Article Description

One of the keys to the realization of quantum anomalous Hall effect is long range ferromagnetism, which is only experimentally realized in Cr or V doped (Bi,Sb)Te system. Both elements are 3d transition metals, and 4d transition metals are found to be ineffective to produce long range ferromagnetism in BiSe. Still, whether long range ferromagnetism can be realized by magnetic doping of 4d elements is an open question. Based on density functional theory calculations, we predict that long range ferromagnetism can be realized in Mo doped BiTe and SbTe, which are semiconducting. The coupling strength is comparable with that of Cr doped BiTe and SbTe. Therefore, Mo doped BiTe and SbTe or their alloys can be new systems to realize carrier free long-range ferromagnetism.

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