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Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Semiconductor Science and Technology, ISSN: 1361-6641, Vol: 34, Issue: 7
2019
  • 27
    Citations
  • 0
    Usage
  • 24
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    27
    • Citation Indexes
      26
    • Patent Family Citations
      1
      • Patent Families
        1
  • Captures
    24

Article Description

This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM) (TiN/yttrium oxide/Pt) devices. We report the coexistence of bipolar and unipolar resistive switching within a single device stack. For bipolar DC operation, the devices show gradual set and reset behavior with resistance ratio up to two orders of magnitude. By using nanosecond regime pulses (20 to 100 ns pulse width) of constant voltage amplitude, this gradual switching behavior could be utilized in tuning the resistance during set and reset spanning up to two orders of magnitude. This demonstrates that yttrium oxide based RRAM devices are alternative candidates for multibit operations and neuromorphic applications.

Bibliographic Details

Stefan Petzold; Eszter Piros; S. U. Sharath; Erwin Hildebrandt; Lambert Alff; Alexander Zintler; Leopoldo Molina-Luna; Christian Wenger

IOP Publishing

Materials Science; Physics and Astronomy; Engineering

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