E-beam longitudinal pumped semiconductor laser based on ZnCdS/ZnSSe type-II multi quantum well structure
Journal of Physics: Conference Series, ISSN: 1742-6596, Vol: 1439, Issue: 1
2020
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Conference Paper Description
A ZnCdS/ZnSSe multi quantum well structure was grown by metal-organic vapor phase epitaxy on GaAs substrate. The structure is consisted of the 45 ZnCdS layers of 5 nm in thickness separated by the 100 nm thin ZnSSe barrier layers and was the type-II heterostructure. A microresonator was produced from this structure for scanning electron beam longitudinal pumping. Lasing with output power up to 2W at 478 nm was achieved at room temperature.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85079101928&origin=inward; http://dx.doi.org/10.1088/1742-6596/1439/1/012017; https://iopscience.iop.org/article/10.1088/1742-6596/1439/1/012017; https://dx.doi.org/10.1088/1742-6596/1439/1/012017; https://validate.perfdrive.com/fb803c746e9148689b3984a31fccd902/captcha?ssa=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1088%2F1742-6596%2F1439%2F1%2F012017&ssb=13f541d8f26efc1722f6c8d5586cb3808a9f6d22&ssc=MDI3MDQ5ZTAzYjcxLTcyNDgtZjNlNC03NDRiLWRhYzdkOTUy
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