Spectral limits for disordered semiconductors and their interfaces
Physical Review B, ISSN: 0163-1829, Vol: 28, Issue: 8, Page: 4468-4471
1983
- 4Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations4
- Citation Indexes4
- CrossRef4
Article Description
A spectral limit theorem is proved for semiconducting systems without crystal periodicity, generalizing earlier theorems involving model Hamiltonians for amorphous semiconductors and substitutional alloys. The theorem treats the combined effects of substitutional chemical disorder, bond-strength fluctuations, and noncrystalline topology. The allowed one-electron spectrum is shown to be contained in the union of the one-electron spectra associated with a collection of hypothetical bulk Hamiltonians corresponding to the various bond types in the system. Applications to simple models representative of the AlxGa1-xAs-GaAs interface, the Si grain boundary, and amorphous Si and GaAs are discussed. © 1983 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=35949021004&origin=inward; http://dx.doi.org/10.1103/physrevb.28.4468; https://link.aps.org/doi/10.1103/PhysRevB.28.4468; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.28.4468/fulltext; http://link.aps.org/article/10.1103/PhysRevB.28.4468
American Physical Society (APS)
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