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Photoemission studies of CuInSe2 and CuGaSe2 and of their interfaces with Si and Ge

Physical Review B, ISSN: 0163-1829, Vol: 31, Issue: 2, Page: 1022-1027
1985
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We studied the electronic structure of two fundamental components of the AIBIIIX2VI family of semiconductors by synchrotron-radiation photoemission. The experiments investigated the clean-surface density of occupied states, the Cu d-band satellites with photoemission resonant behavior at the Cu 3p optical absorption threshold, and the absolute energy position of the valence-band edges, Ev. In particular, we estimated the Ev terms (relative to the top of the valence band of Ge), which can be used to determine the band discontinuities of heterojunctions involving these materials. As an example, the Ev term obtained for CuInSe2 was used to predict the conduction-band discontinuity of the CuInSe2/CdS heterojunction solar cell. © 1985 The American Physical Society.

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