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Photoluminescence determination of the pressure and temperature of the shock wave induced by a picosecond laser pulse in the layered semiconductor GaSe

Physical Review B, ISSN: 0163-1829, Vol: 31, Issue: 2, Page: 942-946
1985
  • 19
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    19
    • Citation Indexes
      19
  • Captures
    5

Article Description

The pressure and temperature of the shock waves generated by a picosecond laser pulse in the layered semiconductor gallium selenide were determined by shock-induced changes of the photoluminescence spectra. The peak pressure was measured to be about 13 kbar, while the temperature remained the same during the measured time range. Our results are consistent with the pressure measurements made with a piezoelectric transducer. © 1985 The American Physical Society.

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