Interface chemistry of ternary semiconductors: Local morphology of the Hg1-xCdxTe(110)-Cr interface
Physical Review B, ISSN: 0163-1829, Vol: 32, Issue: 12, Page: 8100-8107
1985
- 37Citations
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations37
- Citation Indexes37
- 37
- CrossRef21
Article Description
Synchrotron-radiation photoemission studies of interfaces prepared in situ on cleaved substrates show atomic interdiffusion with Cr/Hg and Cr/Cd exchange reactions taking place at room temperature for Cr coverages less than 2 A. Correspondingly, dissociated Te is released at the surface. A subsurface region 1013 A thick is formed in which Cr atoms replace all of the Hg atoms and at least 20% of the Cd atoms. Below this subsurface the semiconductor maintains the bulk stoichiometry and the initial surface band bending. © 1985 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0642354863&origin=inward; http://dx.doi.org/10.1103/physrevb.32.8100; http://www.ncbi.nlm.nih.gov/pubmed/9936988; https://link.aps.org/doi/10.1103/PhysRevB.32.8100; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.8100/fulltext; http://link.aps.org/article/10.1103/PhysRevB.32.8100
American Physical Society (APS)
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know