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Interface chemistry of ternary semiconductors: Local morphology of the Hg1-xCdxTe(110)-Cr interface

Physical Review B, ISSN: 0163-1829, Vol: 32, Issue: 12, Page: 8100-8107
1985
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  • Citations
    37
    • Citation Indexes
      37

Article Description

Synchrotron-radiation photoemission studies of interfaces prepared in situ on cleaved substrates show atomic interdiffusion with Cr/Hg and Cr/Cd exchange reactions taking place at room temperature for Cr coverages less than 2 A. Correspondingly, dissociated Te is released at the surface. A subsurface region 1013 A thick is formed in which Cr atoms replace all of the Hg atoms and at least 20% of the Cd atoms. Below this subsurface the semiconductor maintains the bulk stoichiometry and the initial surface band bending. © 1985 The American Physical Society.

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