Electric-field-induced Raman scattering: Resonance, temperature, and screening effects
Physical Review B, ISSN: 0163-1829, Vol: 34, Issue: 6, Page: 4017-4025
1986
- 36Citations
- 5Captures
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Metrics Details
- Citations36
- Citation Indexes36
- CrossRef36
- 35
- Captures5
- Readers5
Article Description
A comprehensive, experimental characterization of electric-field-induced Raman scattering (EFIRS), a method to probe electric fields within a semiconductor depletion region, is given. Resonance effects, screening of the depletion region by photoexcited carriers, and the influence of temperature on the Raman signal of the symmetry-forbidden, electric-field-dependent LO phonon are discussed for the case of cleaved n-type GaAs surfaces. By comparing results from biased Schottky devices with those from adsorbate-covered surfaces, which were cleaved in ultrahigh vacuum, it is shown that the theoretically expected linear relation between the LO-phonon Raman signal and the Schottky-barrier height holds for the whole range of adsorbate-related potential barriers. In extreme resonance, higher-order effects can affect this relation drastically. However, choosing appropriate power densities of the exciting laser source leads to a partial screening of the space-charge layer by photoexcited carriers, which strongly attenuates these nonlinear effects. Hence a relatively simple calibration of the Raman signals in terms of absolute barrier heights becomes possible by using well-established Schottky-barrier heights as a calibration standard. © 1986 The American Physical Society.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=4143099280&origin=inward; http://dx.doi.org/10.1103/physrevb.34.4017; http://www.ncbi.nlm.nih.gov/pubmed/9940168; https://link.aps.org/doi/10.1103/PhysRevB.34.4017; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.4017/fulltext; http://link.aps.org/article/10.1103/PhysRevB.34.4017
American Physical Society (APS)
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